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| Small Signal Transistor Arrays UN225 Transistor array to drive the small motor s Features q q q q Small and lightweight Low power consumption (low VCE(sat) transistor used) Low-voltage drive With 8 elements incorporated (SO-16) 1 Unit: mm 7.70.3 5.50.3 16 0.8 1.50.1 6.50.3 s Applications q q q q 16-0.30.1 Video cameras Cameras Portable CD players Small motor drive circuits in general for electronic equipment. 0 to 0.1 0.5 8 9 14-0.750.1 12 6 12 0.50.2 s 6 Absolute Maximum Ratings (Ta=252C) Parameter Symbol VCBO VCEO VEBO IC PT* Tj Tstg Ratings 10 10 7 0.5 0.5 150 -55 to +150 Unit V V V A W C C 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 0.2-0.05 +0.1 45 SO-16 Package Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Total power dissipation Junction temperature Storage temperature Internal Connection Note: marks used above: +: NPN part, -: PNP part * TC = 25C only when the elements are active 1 Small Signal Transistor Arrays UN225 s Electrical Characteristics Parameter Collector cutoff current (Ta=252C) Symbol ICBO VCBO VCEO VEBO hFE VCE(sat)1 fT Cob VF Conditions (NPN) VCB = 7V (PNP) VCB = -7V (NPN) IC = 10A (PNP) IC = -10A (NPN) IC = 1mA (PNP) IC = -1mA (NPN) IE = 10A (PNP) IE = -10A (NPN) VCE = 2V, IC = 0.2A* (PNP) VCE = -2V, IC = - 0.2A* (NPN) IC = 0.2A, IB = 2mA (PNP) IC = - 0.2A, IB = -2mA (NPN) VCB = 6V, IE = -50mA, f = 200MHz (PNP) VCB = -6V, IE = 50mA, f = 200MHz (NPN) VCB = 6V, IE = 0, f = 1MHz (PNP) VCB = -6V, IE = 0, f = 1MHz (NPN) IF = 0.5A (PNP) IF = - 0.5A 120 120 25 35 1.3 -1.3 10 -10 10 -10 7 -7 200 200 800 800 0.2 - 0.2 V min typ max 1 -1 Unit A Collector to base voltage V Collector to emitter voltage V Emitter to base voltage V Forward current transfer ratio Collector to emitter saturation voltage Transition frequency MHz Collector output capacitance pF Forward voltage (DC) *Pulse measurement V Characteristics charts of PNP transistor block PT -- Ta 0.6 IC -- VCE -1.2 Ta=25C -1.2 IC -- VBE VCE=-2V -1.0 25C Total power dissipation PT (W) 0.5 -1.0 IB=-6mA -5mA -4mA -3mA Collector current IC (A) Collector current IC (A) Ta=75C -0.8 -25C 0.4 -0.8 0.3 -0.6 -2mA -0.6 0.2 -0.4 -1mA -0.2 -0.4 0.1 -0.2 0 0 20 40 60 80 100 120 140 160 0 0 -2 -4 -6 -8 -10 -12 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) 2 Small Signal Transistor Arrays VCE(sat) -- IC -10 UN225 hFE -- IC Cob -- VCB 120 Collector to emitter saturation voltage VCE(sat) (V) IC/IB=100 600 -3 -1 -0.3 25C -0.1 -0.03 -0.01 -0.003 -0.001 -0.01 -0.03 -0.1 -0.3 -25C Ta=75C Collector output capacitance Cob (pF) VCE=-2V Forward current transfer ratio hFE 500 100 f=1MHz IE=0 Ta=25C 400 Ta=75C 25C 80 300 -25C 200 60 40 100 20 -1 -3 -10 0 -0.01 -0.03 -0.1 -0.3 -1 -3 -10 0 -1 -3 -10 -30 -100 Collector current IC (A) Collector current IC (A) Collector to base voltage VCB (V) Characteristics charts of NPN transistor block PT -- Ta 0.6 1.2 Ta=25C IB=3.0mA IC -- VCE 1.2 IC -- VBE VCE=2V 1.0 2.0mA 25C Total power dissipation PT (W) 0.5 1.0 2.5mA Collector current IC (A) Collector current IC (A) Ta=75C 0.8 -25C 0.4 0.8 1.5mA 0.6 0.3 1.0mA 0.6 0.2 0.4 0.5mA 0.2 0.4 0.1 0.2 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2.0 2.4 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC 10 hFE -- IC 600 Cob -- VCB Collector output capacitance Cob (pF) VCE=2V Collector to emitter saturation voltage VCE(sat) (V) IC/IB=100 60 3 1 0.3 0.1 0.03 0.01 0.003 0.001 0.01 0.03 Ta=75C 25C -25C Forward current transfer ratio hFE 500 Ta=75C 25C 50 f=1MHz IE=0 Ta=25C 400 40 300 -25C 30 200 20 100 10 0.1 0.3 1 3 10 0 0.01 0.03 0.1 0.3 1 3 10 0 1 3 10 30 100 Collector current IC (A) Collector current IC (A) Collector to base voltage VCB (V) 3 |
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